NVIDIA Adopts TSMC’s 0.11 Micron Technology

Deep Sub-Micron Process Technology Allows for Better Performance and Power Improvements

Santa Clara, CA and Hsin-Chu, Taiwan - Feburary 24, 2004 - NVIDIA Corporation (Nasdaq: NVDA) today confirmed that it will be one of the first semiconductor companies to manufacture select up-coming graphics processing units (GPUs) at Taiwan Semiconductor Manufacturing Company’s (TSMC’s) (TAIEX: 2330, NYSE: TSMC) 0.11 ?m (micron) process technology. NVIDIA will combine TSMC’s 0.11 micron process with its own innovative engineering designs to deliver high-performance and low-power consumption in a graphics processor.

"The decision to move to this new process underscores our long-standing relationship between TSMC and NVIDIA," stated Di Ma, vice president of operations at NVIDIA. "This new manufacturing technology, along with numerous architectural enhancements, enables us to continue delivering products that allow end users to interact with a wide variety of digital devices. We look forward to the new opportunities this advancement will allow us."

"TSMC is committed to innovative collaboration with forward-looking companies such as NVIDIA," said Dr. Rick Tsai, President of TSMC. "Through these relationships, we can deliver technology platforms that create new opportunities for our customers."

TSMC’s 0.11 micron process technology is fundamentally a photolithographic shrink of its industry-leading 0.13 micron process. The process will be available in both high-performance and general-purpose versions using FSG-based dielectrics. Though actual results are design-dependent, TSMC’s 0.11 micron high-performance process also includes transistor enhancements that improve speed and reduce power consumption relative to its 0.13 micron FSG-based technology.

TSMC began 0.11 micron high-performance technology development in 2002 and product-qualified the process in December of 2003. Design rules, design guidelines, SPICE and SRAM models have been developed and third-party compilers are expected to be available in March. Yields have already reached production-worthy levels and the low-voltage version has already ramped into volume production. The 0.11 micron general-purpose technology is expected to enter risk production in the first quarter of next year.